SIZ902DT-T1-GE3 MOSFET Array Datasheet & Equivalents
N-Channel Array
-
Standard Power
VISHAY
Vds Max
30V
Id Max
16A
Rds(on)
14.5mΩ@4.5V
Vgs(th)
-
Quick Reference
The SIZ902DT-T1-GE3 is a N-Channel Array in a - package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 16A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 16A | Max current handling |
| Power Dissipation (Pd) | 66W | Max thermal limit |
| On-Resistance (Rds(on)) | 14.5mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | - | Voltage required to turn on |
| Gate Charge (Qg) | 65nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.6nF | Internal gate capacitance |
| Output Capacitance (Coss) | 485pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMT32M6LDG-7 | N-Channel Array | - | 30V | 47A | 3.6mΩ@4.5V | 2.2V | DIODES 📄 PDF |
| DMT32M6LDG-13 | N-Channel Array | - | 30V | 47A | 3.6mΩ@4.5V | 2.2V | DIODES 📄 PDF |
| DMT35M8LDG-7 | N-Channel Array | - | 30V | 17A | 4.7mΩ@10V | 1.9V | DIODES 📄 PDF |
| SISF00DN-T1-GE3 | N-Channel Array | - | 30V | 60A | 5mΩ@10V | 2.1V | VISHAY 📄 PDF |
| SIZF906ADT-T1-GE3 | N-Channel Array | - | 30V | 60A | 5.3mΩ@4.5V | 2.2V | VISHAY 📄 PDF |
| DMT35M8LDG-13 | N-Channel Array | - | 30V | 17A | 5.7mΩ@4.5V | 1.9V | DIODES 📄 PDF |
| SIZ200DT-T1-GE3 | N-Channel Array | - | 30V | 61A | 5.8mΩ@10V | 2.4V | VISHAY 📄 PDF |
| EPC2111 | N-Channel Array | - | 30V | 16A | 14mΩ 6mΩ |
1.4V | EPC 📄 PDF |
| SIZF916DT-T1-GE3 | N-Channel Array | - | 30V | 60A | 6.8mΩ@4.5V | 2.4V | VISHAY 📄 PDF |
| SIZF300DT-T1-GE3 | N-Channel Array | - | 30V | 141A | 7mΩ@4.5V | 2.2V | VISHAY 📄 PDF |
| SIZF360DT-T1-GE3 | N-Channel Array | - | 30V | 143A | 7.5mΩ@4.5V | 2.2V | VISHAY 📄 PDF |
| SQJ910AEP-T1_BE3 | N-Channel Array | - | 30V | 30A | 12mΩ@10V | 2.5V | VISHAY 📄 PDF |
| IPB13N03LBG | N-Channel Array | - | 30V | 30A | 12.5mΩ@10V | 2V | Infineon 📄 PDF |
| SQJ914EP-T1_BE3 | N-Channel Array | - | 30V | 30A | 17mΩ@4.5V | 2.5V | VISHAY 📄 PDF |
| SQJQ936E-T1_GE3 | N-Channel Array | - | 40V | 100A | 2.3mΩ@10V | 3.5V | VISHAY 📄 PDF |
| SIZF640DT-T1-GE3 | N-Channel Array | - | 40V | 159A | 2.4mΩ@4.5V | 2.4V | VISHAY 📄 PDF |
| NVMJD2D7N04CLTWG | N-Channel Array | - | 40V | 121A | 2.65mΩ@10V | 2.2V | onsemi 📄 PDF |
| NVMJD3D0N04CTWG | N-Channel Array | - | 40V | 129A | 2.9mΩ@10V | 3.5V | onsemi 📄 PDF |
| SQJQ906E-T1_GE3 | N-Channel Array | - | 40V | 95A | 3.3mΩ@10V | 3.5V | VISHAY 📄 PDF |
| SQJQ904E-T1_GE3 | N-Channel Array | - | 40V | 100A | 3.4mΩ@10V | 3.5V | VISHAY 📄 PDF |