NVMJD3D0N04CTWG MOSFET Array Datasheet & Equivalents
N-Channel Array
-
Standard Power
onsemi
Vds Max
40V
Id Max
129A
Rds(on)
2.9mΩ@10V
Vgs(th)
3.5V
Quick Reference
The NVMJD3D0N04CTWG is a N-Channel Array in a - package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 40V and a continuous drain current of 129A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | - | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 129A | Max current handling |
| Power Dissipation (Pd) | 44.3W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.9mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 40nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.54nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.39nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SIZF640DT-T1-GE3 | N-Channel Array | - | 40V | 159A | 2.4mΩ@4.5V | 2.4V | VISHAY 📄 PDF |
| SQJQ906EL-T1_GE3 | N-Channel Array | - | 40V | 160A | - | 2.5V | VISHAY 📄 PDF |
| MTI200WX75GD-SMD | N-Channel Array | - | 75V | 255A | 1.3mΩ@10V | 3.8V | Littelfuse/IXYS 📄 PDF |
| ISG0616N10NM5HSCATMA1 | N-Channel Array | - | 100V | 139A | 3.4mΩ@10V 4.3mΩ@6V |
3V | Infineon 📄 PDF |
| APTM10HM05FG | N-Channel Array | - | 100V | 278A | 5mΩ@10V | 4V | MICROCHIP 📄 PDF |
| APTM10DHM05G | N-Channel Array | - | 100V | 278A | 5mΩ@10V | 4V | MICROCHIP 📄 PDF |
| APTM10HM09FT3G | N-Channel Array | - | 100V | 139A | 10mΩ@10V | 4V | MICROCHIP 📄 PDF |