SI4599DY-T1-GE3 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SO-8
Standard Power
VISHAY
Vds Max
40V
Id Max
6.8A;5.8A
Rds(on)
-
Vgs(th)
-
Quick Reference
The SI4599DY-T1-GE3 is a Dual N/P-Channel in a SO-8 package, manufactured by VISHAY. Each channel supports a drain-source breakdown voltage of 40V and a continuous drain current of 6.8A;5.8A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | VISHAY | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 6.8A;5.8A | Max current handling |
| Power Dissipation (Pd) | 3.1W | Max thermal limit |
| On-Resistance (Rds(on)) | - | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | - | Voltage required to turn on |
| Gate Charge (Qg) | 11.8nC@10V | Switching energy |
| Input Capacitance (Ciss) | 640pF | Internal gate capacitance |
| Output Capacitance (Coss) | 120pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMC4040SSDQ-13 | Dual N/P-Channel | SO-8 | 40V | 7.5A | 25mΩ@10V 25mΩ@-10V |
1.3V | DIODES 📄 PDF |
| DMC4028SSD-13 | Dual N/P-Channel | SO-8 | 40V | 7.2A;5.2A | 28mΩ@10V 50mΩ@10V |
3V | DIODES 📄 PDF |
| SI4564DY-T1-GE3 | Dual N/P-Channel | SO-8 | 40V | 10A | 28mΩ@4.5V | 2.5V | VISHAY 📄 PDF |
| DMC4029SSDQ-13 | Dual N/P-Channel | SO-8 | 40V | 9A | 55mΩ@4.5V | 3V | DIODES 📄 PDF |